Effect of group V/III flux ratio on the reliability of GaAs/Al/sub 0. 3/Ga/sub 0. 7/As laser diodes prepared by molecular beam epitaxy

Journal Article · Sun Jan 24 23:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99484· OSTI ID:5525510

Hayakawa, T; Takahashi, K; Suyama, T; Kondo, M; Yamamoto, S; Hijikata, T

The effect of group V/III flux ratio ..gamma.. on the reliability of GaAs/Al/sub 0.3/Ga/sub 0.7/As double-heterostructure lasers grown by molecular beam epitaxy at 720 /sup 0/C has been studied. The threshold current does not change with ..gamma... By contrast, the degradation rate strongly depends on ..gamma.. and it takes a minimum at ..gamma..approx.3 where the photoluminescence intensity of the Al/sub 0.3/Ga/sub 0.7/As cladding layer is maximum. In the case of ..gamma..approx.3, the degradation rate is lower than that of lasers grown by liquid phase epitaxy.

• Research Organization: Central Research Laboratories, Sharp Corporation, Tenri, Nara 632, Japan
• OSTI ID: 5525510
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPERATION
OPTIMIZATION
PERFORMANCE
PNICTIDES
RELIABILITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT