Al/sub 0. 3/Ga/sub 0. 7/P/sub 0. 01/As/sub 0. 99/ GaAs laser heterostructures grown by molecular beam epitaxy
Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 5034218
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 53:9
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR LASERS
CRYSTAL GROWTH
ALUMINIUM ARSENIDES
ALUMINIUM PHOSPHIDES
BRAGG REFLECTION
DISLOCATIONS
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
LAYERS
LINE WIDTHS
MOLECULAR BEAMS
QUANTITY RATIO
STRESSES
SUBSTRATES
THICKNESS
X RADIATION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIMENSIONS
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
IONIZING RADIATIONS
JUNCTIONS
LASERS
LINE DEFECTS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420300* - Engineering- Lasers- (-1989)