Al/sub 0. 3/Ga/sub 0. 7/P/sub 0. 01/As/sub 0. 99/ GaAs laser heterostructures grown by molecular beam epitaxy
Journal Article
·
· J. Appl. Phys.; (United States)
Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 5034218
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:9; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Defects and stresses in MBE-grown GaN and Al{sub 0.3}Ga{sub 0.7}N layers doped by silicon using silane
InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor
Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al{sub x}Ga{sub 1–} {sub x}N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy
Journal Article
·
Sat Dec 14 23:00:00 EST 2013
· Crystallography Reports
·
OSTI ID:22311416
InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor
Journal Article
·
Mon May 08 00:00:00 EDT 2000
· Applied Physics Letters
·
OSTI ID:20216186
Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in Al{sub x}Ga{sub 1–} {sub x}N:Si Layers Obtained by Ammonia Molecular Beam Epitaxy
Journal Article
·
Wed Feb 14 23:00:00 EST 2018
· Semiconductors
·
OSTI ID:22756204
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
BRAGG REFLECTION
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIMENSIONS
DISLOCATIONS
ELECTROMAGNETIC RADIATION
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
IONIZING RADIATIONS
JUNCTIONS
LASERS
LAYERS
LINE DEFECTS
LINE WIDTHS
MOLECULAR BEAMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTITY RATIO
RADIATIONS
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STRESSES
SUBSTRATES
THICKNESS
X RADIATION
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
BRAGG REFLECTION
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIMENSIONS
DISLOCATIONS
ELECTROMAGNETIC RADIATION
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
IONIZING RADIATIONS
JUNCTIONS
LASERS
LAYERS
LINE DEFECTS
LINE WIDTHS
MOLECULAR BEAMS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTITY RATIO
RADIATIONS
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STRESSES
SUBSTRATES
THICKNESS
X RADIATION