Defects and stresses in MBE-grown GaN and Al{sub 0.3}Ga{sub 0.7}N layers doped by silicon using silane
Journal Article
·
· Crystallography Reports
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
- Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
The electric and structural characteristics of silicon-doped GaN and Al{sub 0.3}Ga{sub 0.7}N layers grown by molecular beam epitaxy (MBE) using silane have been analyzed by the Hall effect, Raman spectroscopy, and high-resolution X-ray diffractometry. It is established that the electron concentration linearly increases up to n = 4 × 10{sup 20} cm{sup −3} with an increase in the silane flow rate for GaN:Si, whereas the corresponding dependence for Al{sub 0.3}Ga{sub 0.7}N:Si is sublinear and the maximum electron concentration is found to be n = 4 × 10{sup 19} cm{sup −3}. X-ray measurements of sample macrobending indicate a decrease in biaxial compressive stress with an increase in the electron concentration in both GaN:Si and Al{sub 0.3}Ga{sub 0.7}N:Si layers. The parameters of the dislocation structure, estimated from the measured broadenings of X-ray reflections, are analyzed.
- OSTI ID:
- 22311416
- Journal Information:
- Crystallography Reports, Journal Name: Crystallography Reports Journal Issue: 7 Vol. 58; ISSN 1063-7745; ISSN CYSTE3
- Country of Publication:
- United States
- Language:
- English
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