Electrical characteristics of low temperature-Al{sub 0.3}Ga{sub 0.7}As
- Univ. of California, Berkeley, CA (United States); and others
In this work, we present electrical characterizations of n{sup +} GaAs/low temperature (LT)-Al{sub 0.3}Ga{sub 0.7}As/n{sup +} GaAs resistor structures in which the LT layers are grown at nominal substrate temperatures of 250 and 300{degrees}C. The resistivity and V{sub tfl} parameters of these LT-Al{sub 0.3}Ga{sub 0.7}As layers are compared with those of LT-GaAs and Al{sub 0.3}Ga{sub 0.7}As grown at a normal growth temperature of 720{degrees}C. Low-temperature Al{sub 0.3}Ga{sub 0.7}As layers exhibit resistivities as high as 10{sup 12} ohm-cm, nearly four orders of magnitude higher than that of LT-GaAs, and V{sub tfl} values as high as 45 V, over twice that of LT-GaAs. We also find that the LT-Al{sub 0.3}Ga{sub 0.7}As materials grown at 250 and 300{degrees}C appear to show opposite and contradictory trends with respect to resistivity and V{sub tfl}. We propose that this result can be explained by residual hopping conduction in the 250{degrees}C material. Temperature dependent conductivity measurements confirm the presence of a hopping mechanism in LT-Al{sub 0.3}Ga{sub 0.7}As grown at 250{degrees}C and yield activation energies of 0.77 and 0.95 eV for LT-GaAs and LT-Al{sub 0.3}Ga{sub 0.7}As, respectively. 9 refs., 3 figs., 2 tabs.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 535214
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 12 Vol. 22; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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