Ultralow recombination velocity at Ga sub 0. 5 In sub 0. 5 P/GaAs heterointerfaces

Journal Article · Mon Sep 18 00:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.101656· OSTI ID:5524325

Olson, J M; Ahrenkiel, R K; Dunlavy, D J; Keyes, B; Kibbler, A E ^[1]

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1. Solar Energy Research Institute, Golden, Colorado 80401 (US)

Using time-resolved photoluminescence, we have examined the optoelectronic properties of Ga{sub 0.5}In{sub 0.5}P/GaAs/Ga{sub 0.5}In{sub 0.5}P double heterostructures grown by organometallic chemical vapor deposition. For comparison, similar structures using Al{sub 0.4}Ga{sub 0.6}As/GaAs and Al{sub 0.5}In{sub 0.5}P/GaAs lattice-matched heterointerfaces were also examined. For the Ga{sub 0.5}In{sub 0.5}P/GaAs heterostructure, we show that the recombination velocity at a Ga{sub 0.5}In{sub 0.5}P/GaAs interface can be less than 1.5 cm/s. As a result, photoluminescence decay times as long as 14 {mu}s have been observed in undoped GaAs double heterostructures. This photoluminescence decay time varies with temperature as {ital T}{sup 1.59}, characteristic of radiative recombination not limited by surface or bulk nonradiative recombination processes. For the Al{sub 0.4}Ga{sub 0.6}As/GaAs and Al{sub 0.5}In{sub 0.5}P/GaAs heterostructures examined in this study, the upper limits of the interface recombination velocity were 210 and 900 cm/s, respectively.

• OSTI ID: 5524325
• Journal Information: Applied Physics Letters; (USA), Vol. 55:12; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ELECTRICAL PROPERTIES
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
CHEMICAL VAPOR DEPOSITION
EXPERIMENTAL DATA
HETEROJUNCTIONS
INTERFACES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
RECOMBINATION
TIME DELAY
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DATA
DEPOSITION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LUMINESCENCE
NUMERICAL DATA
ORGANIC COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SURFACE COATING
360603* - Materials- Properties