Ultralow recombination velocity at Ga sub 0. 5 In sub 0. 5 P/GaAs heterointerfaces

Journal Article · Mon Sep 18 04:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.101656· OSTI ID:5524325

Olson, J M; Ahrenkiel, R K; Dunlavy, D J; Keyes, B; Kibbler, A E ^[1]

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1. Solar Energy Research Institute, Golden, Colorado 80401 (US)

Using time-resolved photoluminescence, we have examined the optoelectronic properties of Ga{sub 0.5}In{sub 0.5}P/GaAs/Ga{sub 0.5}In{sub 0.5}P double heterostructures grown by organometallic chemical vapor deposition. For comparison, similar structures using Al{sub 0.4}Ga{sub 0.6}As/GaAs and Al{sub 0.5}In{sub 0.5}P/GaAs lattice-matched heterointerfaces were also examined. For the Ga{sub 0.5}In{sub 0.5}P/GaAs heterostructure, we show that the recombination velocity at a Ga{sub 0.5}In{sub 0.5}P/GaAs interface can be less than 1.5 cm/s. As a result, photoluminescence decay times as long as 14 {mu}s have been observed in undoped GaAs double heterostructures. This photoluminescence decay time varies with temperature as {ital T}{sup 1.59}, characteristic of radiative recombination not limited by surface or bulk nonradiative recombination processes. For the Al{sub 0.4}Ga{sub 0.6}As/GaAs and Al{sub 0.5}In{sub 0.5}P/GaAs heterostructures examined in this study, the upper limits of the interface recombination velocity were 210 and 900 cm/s, respectively.

• OSTI ID: 5524325
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:12; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DATA
DEPOSITION
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INTERFACES
JUNCTIONS
LUMINESCENCE
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SURFACE COATING
TIME DELAY