Nonradiative recombination in GaAlAs proton-bombarded stripe-geometry lasers

Journal Article · Wed Aug 01 04:00:00 EDT 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.326647· OSTI ID:6191218

Nelson, R J; Rode, D L

Nonradiative recombination processes in GaAlAs double-heterostructure lasers are examined using luminescence time-response measurements. Photoluminescence time-decay data for proton-bombarded (PB) isotype (p-type) heterostructures give an effective recombination velocity for the PB region of (7 +- 1) x 10/sup 5/ cm/sec. Electroluminescence decay times of laser devices indicate that the interfacial recombination velocity of the anisotype interface (p-GaAs/N-GaAlAs) is 1500 +- 500 cm/sec compared with 400 +- 100 cm/sec for isotype (p-type) interfaces. The contribution of each important recombination process to the laser threshold current is calculated. For devices in which the PB region penetrates into the active layer, recombination in the PB region and interfacial recombination are the major nonradiative paths.

• Research Organization: Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
• OSTI ID: 6191218
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTROLUMINESCENCE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
INTERFACES
LASERS
LUMINESCENCE
MATHEMATICAL MODELS
P-TYPE CONDUCTORS
PHOTOLUMINESCENCE
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
VELOCITY