Influence of bulk nonradiative recombination in the wide band-gap regions of molecular beam epitaxially grown GaAs-Al/sub x/Ga/sub 1-x/As DH lasers

Journal Article · Tue Aug 01 04:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90314· OSTI ID:6938503

Tsang, W T

It is shown that bulk nonradiative recombination near the heterojunctions in the wide-band-gap regions is probably an important contributor to the higher threshold current densities of the best state-of-the-art molecular beam epitaxial GaAs-Al/sub x/Ga/sub 1-x/As DH lasers over similar geometry liquid-phase epitaxial lasers. This recombination probably is at least part of the cause of the large recombination velocity (measured as interfacial recombination velocity) in molecular beam epitaxial heterostructures.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6938503
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ENERGY
ENERGY GAP
ENERGY LEVELS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASERS
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD ENERGY