Intrinsic, heterointerface excitonic states in GaAs(n)/Al sub 0. 3 Ga sub 0. 7 As(p) double heterostructures

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7047861

Gilliland, G D; Wolford, D J; Kuech, T F; Bradley, J A ^[1]

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1. T.J. Watson Research Center, Yorktown Heights, NY (United States)

The authors used extensive photoluminescence (PL), PL time-decay measurements, and detailed quantum mechanical modeling to both interpret and quantify the electronic and optical properties of free excitons localized near heterointerfaces. Through detailed spectroscopic measure of the recombination kinetics of the recently observed H-band emission, they found that this emission arises from the radiative decay of such weakly bound ({approx equal}0.5 meV) excitonic species confined to the hole-attractive quantum potentials formed at the p-n heterointerfaces. Detailed measurements in virtually interface-free double GaAs(n)/Al{sub 0.3}Ga{sub 0.7}As(p) heterostructures shows the effects of GaAs layer thickness upon the H-band kinetics - thus confirming quasi-2D excitons become effectively shared by both heterointerfaces for sufficiently thin GaAs layers (< 0.5 {mu}m). Moreover, they found detailed dynamics of these 2D excitons to be influenced by nonradiative interfacial recombination present in nonideal structures. The authors use a novel, all-optical technique to measure the transport properties of these quasi-2D excitons, and find exceedingly long-range (> 400 {mu}m) low temperature diffusion.

• OSTI ID: 7047861
• Report Number(s): CONF-910115--
• Conference Information: Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Journal Volume: 9:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure &amp; Phase Studies
ALUMINIUM
BINDING ENERGY
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOPED MATERIALS
ELEMENTS
EMISSION SPECTROSCOPY
ENERGY
EPITAXY
INTERFACES
MATERIALS
METALS
SEMIMETALS
SILICON
SPECTROSCOPY