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Title: Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0. 5/In/sub 0. 5/P and its heterostructures

Journal Article · · IEEE J. Quant. Electron.; (United States)
DOI:https://doi.org/10.1109/3.7127· OSTI ID:6593225
;  [1]
  1. School of Electrical Engineering, Cornell Univ., Ithaca, NY (US)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/Ga/sub 0.5/In/sub 0.5/P heterostructures are investigated, including quantum shifts from a series of superlattices. Finally, these materials are incorporated in double heterostructure lasers and a single quantum well laser with graded-index separate confinement heterostructure.

OSTI ID:
6593225
Journal Information:
IEEE J. Quant. Electron.; (United States), Vol. 24:9
Country of Publication:
United States
Language:
English