Radiation hardness and annealing tests of a custom VLSI device
Conference
·
OSTI ID:5518818
- Hawaii Univ., Honolulu, HI (USA)
Several NMOS custom VLSI ( Microplex'') circuits have been irradiated with a 500 rad/hr {sup 60}Co source. With power off three of four chips tested have survived doses exceeding 1 Mrad. With power on at a 25% duty cycle, all chips tested failed at doses ranging from 10 to 130 krad. Annealing at 200{degree}C was only partially successful in restoring the chips to useful operating conditions. 10 refs., 4 figs., 1 tab.
- Research Organization:
- Stanford Linear Accelerator Center, Menlo Park, CA (USA)
- Sponsoring Organization:
- DOE/ER
- DOE Contract Number:
- AC03-76SF00515; AA03-76SF00034; AC03-83ER40103
- OSTI ID:
- 5518818
- Report Number(s):
- SLAC-PUB-4104; CONF-8910179--1; ON: DE89013985
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440104* -- Radiation Instrumentation-- High Energy Physics Instrumentation
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACCELERATOR FACILITIES
ACCELERATORS
ELECTRONIC CIRCUITS
HARDENING
INTEGRATED CIRCUITS
LINEAR ACCELERATORS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SIGNAL-TO-NOISE RATIO
SLC DETECTORS
STANFORD LINEAR COLLIDER
TESTING
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACCELERATOR FACILITIES
ACCELERATORS
ELECTRONIC CIRCUITS
HARDENING
INTEGRATED CIRCUITS
LINEAR ACCELERATORS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SIGNAL-TO-NOISE RATIO
SLC DETECTORS
STANFORD LINEAR COLLIDER
TESTING