Radiation damage studies of a custom-designed VLSI readout chip

Conference · Sun Jan 31 23:00:00 EST 1988 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:7029596

Dauncey, P; Barnett, B A; Drewer, D; Matthews, J A.J.; Breakstone, A; Parker, S; Adolphsen, C; Gratta, G; Litke, A; Schwarz, A S

Two structurally similar versions of an NMOS custom VLSI circuit, manufactured at different foundries, have been irradiated with a /sup 60/Co source up to doses of 100 krad. Large differences in their behaviours after irradiation have been seen which are thought to be due to the fabrication processes. These differences are observed in test structure measurements and over-all chip performance. An increase in circuit noise causes one version of the chip to be unusable after radiation doses of 20 krad.

• Research Organization: Johns Hopkins Univ., Baltimore, MD (US)
• OSTI ID: 7029596
• Report Number(s): CONF-871006-
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:1; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT 60
COBALT ISOTOPES
DESIGN
ELECTRONIC CIRCUITS
INTEGRATED CIRCUITS
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IRRADIATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MICROELECTRONIC CIRCUITS
MINUTES LIVING RADIOISOTOPES
NOISE
NUCLEI
ODD-ODD NUCLEI
RADIATION EFFECTS
RADIOISOTOPES
YEARS LIVING RADIOISOTOPES