Radiation hardness and annealing tests of a custom VLSI device

Conference · Sat Jan 31 23:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6716896

Breakstone, A; Parker, S; Adolphsen, C; Litke, A; Schwarz, A; Turala, M; Luth, V

Several NMOS custom VLSI (''Microplex'') circuits have been irradiated with a 500 rad/hr /sup 60/Co source. With power of three of four chips tested have survived doses exceeding 1 Mrad. With power on at a 25% duty cycle, all chips tested failed at doses ranging from 10 to 130 krad. Annealing at 200/sup 0/C was only partially successful in restoring the chips to useful operating conditions.

• Research Organization: Univ. of Hawaii, Honolulu, HI 96822
• OSTI ID: 6716896
• Report Number(s): CONF-861007-
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:1; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT 60
COBALT ISOTOPES
DOSES
ELECTRONIC CIRCUITS
HARDENING
HEAT TREATMENTS
HIGH TEMPERATURE
INTEGRATED CIRCUITS
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IRRADIATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MICROELECTRONIC CIRCUITS
MINUTES LIVING RADIOISOTOPES
MOS TRANSISTORS
NUCLEI
ODD-ODD NUCLEI
OPERATION
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATION HARDENING
RADIOISOTOPES
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS
YEARS LIVING RADIOISOTOPES