Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures
Journal Article
·
· Appl. Phys. Lett.; (United States)
We find that two paramagnetic ''trivalent silicon'' centers appear to be primarily responsible for radiation damage in metal-oxide-silicon structures.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5511442
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:1; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
CAPACITANCE
CHALCOGENIDES
CHEMICAL REACTIONS
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
E CENTERS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRON SPIN RESONANCE
ELEMENTS
GAMMA RADIATION
HEAT TREATMENTS
HOLES
IONIZING RADIATIONS
MAGNETIC RESONANCE
MINERALS
MOS TRANSISTORS
MOSFET
NITROGEN
NONMETALS
OXIDATION
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RADIATIONS
RESONANCE
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
TRAPS
VACANCIES
VERY HIGH TEMPERATURE
360605* -- Materials-- Radiation Effects
ANNEALING
CAPACITANCE
CHALCOGENIDES
CHEMICAL REACTIONS
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
E CENTERS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRON SPIN RESONANCE
ELEMENTS
GAMMA RADIATION
HEAT TREATMENTS
HOLES
IONIZING RADIATIONS
MAGNETIC RESONANCE
MINERALS
MOS TRANSISTORS
MOSFET
NITROGEN
NONMETALS
OXIDATION
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RADIATIONS
RESONANCE
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
TRAPS
VACANCIES
VERY HIGH TEMPERATURE