Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides
Journal Article
·
· Appl. Phys. Lett.; (United States)
We find that two paramagnetic ''trivalent silicon'' centers appear to be responsible for damage resulting from Fowler--Nordheim injection of electrons into thermal oxides on silicon.
- Research Organization:
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802
- OSTI ID:
- 5184687
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:19; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
ELECTRIC FIELDS
ELECTRON SPIN RESONANCE
ELEMENTS
JUNCTIONS
MAGNETIC RESONANCE
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RESONANCE
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TUNNEL EFFECT
360603 -- Materials-- Properties
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
ELECTRIC FIELDS
ELECTRON SPIN RESONANCE
ELEMENTS
JUNCTIONS
MAGNETIC RESONANCE
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RESONANCE
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TUNNEL EFFECT