Theory of response of radiation sensing field-effect transistors in zero-bias operation

Journal Article · Fri Aug 01 00:00:00 EDT 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337369· OSTI ID:5500474

Hughes, R C

Radiation sensing field-effect transistors operated at zero bias show a low-dose response that is roughly linear in the thickness of the gate oxide. The same devices show a thickness squared dependence if a bias is applied during the irradiation. This effect can be explained by examining the effect of diffusion and electron trapping on the buildup of net positive charge in the gate oxide.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5500474
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:3; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
DIFFUSION
DIMENSIONS
FIELD EFFECT TRANSISTORS
FUNCTIONS
IRRADIATION
MOS TRANSISTORS
MOSFET
OPERATION
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RESPONSE FUNCTIONS
SEMICONDUCTOR DEVICES
SPECTRAL RESPONSE
THICKNESS
TRANSISTORS
TRAPPING