A reevaluation of worst-case postirradiation response for hardened MOS transistors
The ''worst-case'' postirradiation response of Sandia hardened n-channel transistors following Co-60 exposure to total dose levels of system interest is demonstrated to occur for zero-volt bias during radiation, and positive bias during a subsequent anneal. This observation is explained in terms of oxide-trapped and interface-state charge buildup and anneal. Additional results are presented which suggest that, for future technologies with very thin gate oxides, worst-case device leakage during irradiation may well occur for zero-volt irradiations. These results highlight the importance of periodically reevaluating the response of MOS devices during and after irradiation to determine worst-case test conditions, particularly as technologies advance and gate insulators become thinner.
- Research Organization:
- Sandia National Labs., P.O. Box 5800, Albuquerque, NM (US)
- OSTI ID:
- 7202040
- Report Number(s):
- CONF-8707112-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
656001 -- Condensed Matter Physics-- Solid-State Plasma
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT 60
COBALT ISOTOPES
ELECTROMAGNETIC RADIATION
EQUIPMENT INTERFACES
GAMMA RADIATION
HEAT TREATMENTS
INSTABILITY
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
IRRADIATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MINUTES LIVING RADIOISOTOPES
MOS TRANSISTORS
NUCLEI
ODD-ODD NUCLEI
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
PLASMA INSTABILITY
PLASMA MACROINSTABILITIES
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
TECHNOLOGY ASSESSMENT
TESTING
TRANSISTORS
TRAPPED-PARTICLE INSTABILITY
YEARS LIVING RADIOISOTOPES