Theory of response of radiation sensing field effect transistors
Journal Article
·
· J. Appl. Phys.; (United States)
Radiation sensing field effect transistors display a variety of nonlinear and saturating responses to ionizing radiation. A model involving the numerical solutions to the photoconductivity equations is presented which describes the response under a wide range of radiation doses and applied fields. The large, unexpected, response for zero bias demonstrates the importance of diffusion of the photocarriers. The simulations are consistent with the known transport parameters for SiO/sub 2/, with the main unknowns being the concentration of electron and hole traps. A variety of data at different applied voltages and doses can be fit with the same transport parameters.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5649631
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:3; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Theory of response of radiation sensing field-effect transistors in zero-bias operation
Comparison of MOS capacitor and transistor postirradiation response
Dual dielectric silicon metal-oxide-semiconductor field-effect transistors as radiation sensors
Journal Article
·
Fri Aug 01 00:00:00 EDT 1986
· J. Appl. Phys.; (United States)
·
OSTI ID:5500474
Comparison of MOS capacitor and transistor postirradiation response
Conference
·
Thu Nov 30 23:00:00 EST 1989
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
·
OSTI ID:7167322
Dual dielectric silicon metal-oxide-semiconductor field-effect transistors as radiation sensors
Journal Article
·
Tue Feb 28 23:00:00 EST 1989
· J. Appl. Phys.; (United States)
·
OSTI ID:6473342
Related Subjects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
CHARGE CARRIERS
CHARGED-PARTICLE TRANSPORT
DIFFUSION
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRON DENSITY
FIELD EFFECT TRANSISTORS
FUNCTIONS
HOLES
MINERALS
MOS TRANSISTORS
MOSFET
NUMERICAL SOLUTION
ONE-DIMENSIONAL CALCULATIONS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION TRANSPORT
RESPONSE FUNCTIONS
SEMICONDUCTOR DEVICES
SILICA
SILICON COMPOUNDS
SILICON OXIDES
SIMULATION
TRANSISTORS
TRAPS
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
CHARGE CARRIERS
CHARGED-PARTICLE TRANSPORT
DIFFUSION
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTRON DENSITY
FIELD EFFECT TRANSISTORS
FUNCTIONS
HOLES
MINERALS
MOS TRANSISTORS
MOSFET
NUMERICAL SOLUTION
ONE-DIMENSIONAL CALCULATIONS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION TRANSPORT
RESPONSE FUNCTIONS
SEMICONDUCTOR DEVICES
SILICA
SILICON COMPOUNDS
SILICON OXIDES
SIMULATION
TRANSISTORS
TRAPS