X-ray diffraction studies of palladium silicide thin films
Technical Report
·
OSTI ID:5495058
The solid state reaction between a Pd thin film and a Si substrate produces a single new phase, Pd/sub 2/Si, for temperatures <700/sup 0/C. When the substrate is a single crystal of (111) surface orientation, this process is particularly interesting because the silicide grows epitaxially. Growth of epitaxial interfacial Pd/sub 2/Si was the focus of this study using X-ray diffraction techniques.
- Research Organization:
- Illinois Univ., Urbana (USA). Graduate Coll.
- DOE Contract Number:
- AC02-76ER01198
- OSTI ID:
- 5495058
- Report Number(s):
- DOE/ER/01198-T9; ON: DE85016737
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
COHERENT SCATTERING
CRYSTAL GROWTH
CRYSTALLOGRAPHY
DIFFRACTION
EPITAXY
FILMS
INTERFACES
KINETICS
PALLADIUM COMPOUNDS
PALLADIUM SILICIDES
SCATTERING
SILICIDES
SILICON COMPOUNDS
STRESSES
SUBSTRATES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
X-RAY DIFFRACTION
360602* -- Other Materials-- Structure & Phase Studies
COHERENT SCATTERING
CRYSTAL GROWTH
CRYSTALLOGRAPHY
DIFFRACTION
EPITAXY
FILMS
INTERFACES
KINETICS
PALLADIUM COMPOUNDS
PALLADIUM SILICIDES
SCATTERING
SILICIDES
SILICON COMPOUNDS
STRESSES
SUBSTRATES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
X-RAY DIFFRACTION