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X-ray diffraction studies of palladium silicide thin films

Technical Report ·
OSTI ID:5495058
The solid state reaction between a Pd thin film and a Si substrate produces a single new phase, Pd/sub 2/Si, for temperatures <700/sup 0/C. When the substrate is a single crystal of (111) surface orientation, this process is particularly interesting because the silicide grows epitaxially. Growth of epitaxial interfacial Pd/sub 2/Si was the focus of this study using X-ray diffraction techniques.
Research Organization:
Illinois Univ., Urbana (USA). Graduate Coll.
DOE Contract Number:
AC02-76ER01198
OSTI ID:
5495058
Report Number(s):
DOE/ER/01198-T9; ON: DE85016737
Country of Publication:
United States
Language:
English

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