X-ray photoelectron diffraction study of thin Al{sub 2}O{sub 3} films grown on Si(111) by molecular beam epitaxy
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Universite de Lyon, Ecully F-69134 (France)
- Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Campus de la Doua, Universite de Lyon, Villeurbanne F-69622 (France)
The in-plane and out-of-plane crystallographic orientations of Al{sub 2}O{sub 3} films grown by molecular beam epitaxy on Si(111) have been determined by combining x-ray photoelectron diffraction (XPD) with transmission electron microscopy (TEM). On the one hand, polar and azimuth XPD curves for Al 2p, O 1s, and Si 2p core levels (recorded on a 6-nm-thick film) clearly indicate that Al{sub 2}O{sub 3} grows (111) oriented on Si(111) but with two in-plane orientations: a 'direct' one, i.e., [112]Al{sub 2}O{sub 3}//[112]Si(111) and a 'mirror' one, i.e., [112]Al{sub 2}O{sub 3}(111)//[112]Si(111). On the other hand, a close inspection of the 404 Al{sub 2}O{sub 3} TEM diffraction spots (recorded on a 2-nm-thick film) reveals that these two in-plane orientations are slightly rotated with respect to the Si(111) orientations. These two results are consistent with an oxygen plane as the interfacial plane between Al{sub 2}O{sub 3}(111) and Si(111)
- OSTI ID:
- 21287019
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 19 Vol. 79; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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