High oxidation state at the epitaxial interface of {gamma}-Al{sub 2}O{sub 3} thin films grown on Si(111) and Si(001)

Journal Article · Mon Oct 11 04:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3499280· OSTI ID:21464513

El Kazzi, M; Silly, M; Sirotti, F ^[1]; Merckling, C ^[2]; Saint-Girons, G; Grenet, G; Hollinger, G ^[3]

---

1. Synchrotron SOLEIL, L'Orme des Merisiers, 91192 Gif Sur Yvette Cedex (France)
2. IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)
3. INL, UMR 5270, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully Cedex (France)

High resolution synchrotron radiation x-ray photoelectron spectroscopy allowed us to identify the chemical bonding at the interface between epitaxial {gamma}-Al{sub 2}O{sub 3} and Si substrate. The experiments were performed on 1 nm thick epitaxial {gamma}-Al{sub 2}O{sub 3} layers grown on both Si(111) and Si(001) substrates. In both cases, the Si 2p core level decomposition recorded at photon energy of 160 eV provided evidence for the absence of Si{sup 2+} and Si{sup 3+} species and the presence of two different Si{sup 4+} species. A microscopic model is proposed for the interface obtained with two incomplete SiO{sub 2} planes based on the Si 2p{sub 3/2} line shape.

• OSTI ID: 21464513
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 97; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
BOSONS
BREMSSTRAHLUNG
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL BONDS
CHEMICAL REACTIONS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELEMENTARY PARTICLES
ELEMENTS
ENERGY RANGE
EPITAXY
EV RANGE
FILMS
INTERFACES
IONS
LAYERS
MASSLESS PARTICLES
MOLECULAR BEAM EPITAXY
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHOTONS
RADIATIONS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON IONS
SILICON OXIDES
SPECTROSCOPY
SUBSTRATES
SYNCHROTRON RADIATION
THIN FILMS
VALENCE
X-RAY PHOTOELECTRON SPECTROSCOPY