Pseudomorphic molecular beam epitaxy growth of {gamma}-Al{sub 2}O{sub 3}(001) on Si(001) and evidence for spontaneous lattice reorientation during epitaxy

Journal Article · Mon Dec 04 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2403902· OSTI ID:20880132

Merckling, C; El-Kazzi, M; Delhaye, G; Gendry, M; Saint-Girons, G; Hollinger, G; Largeau, L; Patriarche, G ^[1]

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1. STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France)

Single crystal {gamma}-Al{sub 2}O{sub 3} thin films have been epitaxially grown by molecular beam epitaxy at 850 deg. C on Si(001) substrates. Reflection high energy electron diffraction and transmission electron microscopy experiments evidence the good crystalline quality of the Al{sub 2}O{sub 3} layer. The present study shows that the two first monolayers of {gamma}-Al{sub 2}O{sub 3} are (001) oriented and coherently strained on Si. For larger thickness, a transition from (001)- to (111)-oriented Al{sub 2}O{sub 3} occurs, together with the apparition of domains in the layer. In-plane epitaxial relationship between Al{sub 2}O{sub 3} and Si(001) are deduced from these observations.

• OSTI ID: 20880132
• Journal Information: Applied Physics Letters, Vol. 89, Issue 23; Other Information: DOI: 10.1063/1.2403902; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CRYSTAL GROWTH
ELECTRON DIFFRACTION
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
REFLECTION
RESIDUAL STRESSES
SEMICONDUCTOR MATERIALS
SILICON
STRESS RELAXATION
SUBSTRATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY