Epitaxial growth of (001) Al on (111) Si by vapor deposition

Journal Article · Mon Aug 24 04:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.107726· OSTI ID:7166042

Thangaraj, N; Westmacott, K H; Dahmen, U ^[1]

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1. National Center for Electron Microscopy, Materials Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)

Heteroepitaxial growth of (001) Al thin films on Si (111) single crystal substrates by vapor deposition was studied by means of x-ray diffraction, Rutherford backscattering spectrometry, and transmission electron microscopy techniques. It was observed that the films deposited at room temperature exhibit random (111) texture, while the films deposited at 280 {degree}C show perfect epitaxial alignment of (001) Al planes with (111) Si planes. In the interface plane {l angle}110{r angle} close packed directions in both the film and the substrate are parallel and hence Al grows with three orientation variants in a unique mazed tricrystal arrangement.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7166042
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 61:8; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
ALIGNMENT
ALUMINIUM
COHERENT SCATTERING
DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
ION PROBES
METALS
MICROSCOPY
PROBES
SCATTERING
SEMIMETALS
SILICON
TEMPERATURE EFFECTS
TEXTURE
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION