Control of texture during vapor deposition of Al on (111) Si

Conference · Mon Apr 01 04:00:00 EST 1991

DOI:https://doi.org/10.1557/PROC-221-81· OSTI ID:6080193

Thangaraj, N; Westmacott, K H; Dahmen, U ^[1]; Reyes-Gasga, J ^[2]

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1. Lawrence Berkeley Lab., CA (United States)
2. Universidad Nacional Autonoma de Mexico, Mexico City (Mexico). Inst. de Fisica

The growth of Al on (111) Si single crystal substrates by various techniques usually leads to films with (111) texture, sometimes with a small (100) component. Using X-ray diffraction and electron microscopy, the present study shows that the (100) texture component can be enhanced to the point of forming an oriented (100) continuous tricrystal structure. The formation of this texture is shown to be related the presence of Cu. It is concluded that an understanding of heteroepitaxy must take into account the effect of chemistry in addition to the crystallographic criteria of lattice matching.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6080193
• Report Number(s): LBL-30729; CONF-910406--39; ON: DE92004168
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
360102 -- Metals & Alloys-- Structure & Phase Studies
ALUMINIUM
COATINGS
COHERENT SCATTERING
COPPER
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
GRAIN BOUNDARIES
METALS
MICROSCOPY
MICROSTRUCTURE
SCATTERING
SEMIMETALS
SILICON
TEXTURE
TRANSITION ELEMENTS
X-RAY DIFFRACTION