Epitaxial growth of (011) Al on (100) Si by vapor deposition

Journal Article · Mon Jul 06 04:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.107660· OSTI ID:5008196

Thangaraj, N; Westmacott, K H; Dahmen, U ^[1]

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1. National Center for Electron Microscopy, MSD, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)

The morphology, orientation relationship and interface structure of Al vapor deposited on (100) Si single-crystal substrates were investigated by x-ray diffraction and transmission electron microscopy. It was shown that vapor growth at room-temperature results in a random (111) texture whereas growth at 280 {degree}C leads to films with high-quality (011) epitaxy and a high degree of grain boundary faceting. Due to alignment of close-packed directions in the plane of the interface there are two orientation variants with a morphology characterized by an oriented 90{degree} {l angle}011{r angle} mazed bicrystal structure.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5008196
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 61:1; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
ALUMINIUM
COHERENT SCATTERING
CRYSTAL STRUCTURE
DEPOSITION
DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
GRAIN BOUNDARIES
INTERFACES
METALS
MICROSCOPY
MICROSTRUCTURE
MORPHOLOGY
PHYSICAL VAPOR DEPOSITION
SCATTERING
SEMIMETALS
SILICON
SURFACE COATING
TEXTURE
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION