Preparation of Schottky diodes for EBIC investigation of grain boundary passivation in Si ribbons
The preparation of Schottky diodes for repeated EBIC investigations of the same area is described. Application of the technique to the study of grain-boundary passivation with atomic hydrogen shows that the degree of passivation varies strongly from boundary to boundary.
- Research Organization:
- Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science and Engineering
- DOE Contract Number:
- EY-76-S-02-2899
- OSTI ID:
- 5491749
- Report Number(s):
- COO-2899-T1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360101 -- Metals & Alloys-- Preparation & Fabrication
360105* -- Metals & Alloys-- Corrosion & Erosion
CRYOGENIC FLUIDS
CRYSTAL STRUCTURE
DEFECTS
ELEMENTS
FABRICATION
FLUIDS
GRAIN BOUNDARIES
HYDROGEN
MICROSTRUCTURE
NONMETALS
PASSIVATION
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
360101 -- Metals & Alloys-- Preparation & Fabrication
360105* -- Metals & Alloys-- Corrosion & Erosion
CRYOGENIC FLUIDS
CRYSTAL STRUCTURE
DEFECTS
ELEMENTS
FABRICATION
FLUIDS
GRAIN BOUNDARIES
HYDROGEN
MICROSTRUCTURE
NONMETALS
PASSIVATION
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON