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Preparation of Schottky diodes for EBIC investigation of grain boundary passivation in Si ribbons

Technical Report ·
DOI:https://doi.org/10.2172/5491749· OSTI ID:5491749

The preparation of Schottky diodes for repeated EBIC investigations of the same area is described. Application of the technique to the study of grain-boundary passivation with atomic hydrogen shows that the degree of passivation varies strongly from boundary to boundary.

Research Organization:
Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science and Engineering
DOE Contract Number:
EY-76-S-02-2899
OSTI ID:
5491749
Report Number(s):
COO-2899-T1
Country of Publication:
United States
Language:
English