Influence of grain boundaries on the electrical properties of polycrystalline-silicon films. Progress report
Technical Report
·
OSTI ID:5251764
Progress is reported in: preparation of TEM specimens and Schottky diodes for EBIC investigations; acquisition and installation of instruments for EBIC, SEM, and DLTS; the discovery that certain grain boundaries in silicon are actually dissociated on an extremely fine scale; and the EBIC contrast analysis of atomic jogs in intrinsic grain boundary dislocations in a SIGMA-3 grain boundary. Attached are eight papers on studies of the structure and electrical properties of silicon. (LEW)
- Research Organization:
- Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science and Engineering
- DOE Contract Number:
- AS02-76ER02899
- OSTI ID:
- 5251764
- Report Number(s):
- DOE/ER/02899-5; ON: DE82007833
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
CURRENTS
DISLOCATIONS
EDDY CURRENTS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
FILMS
GRAIN BOUNDARIES
LINE DEFECTS
MEASURING INSTRUMENTS
MICROSCOPY
MICROSTRUCTURE
PHYSICAL PROPERTIES
POLYCRYSTALS
SAMPLE PREPARATION
SCANNING ELECTRON MICROSCOPY
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
TRANSIENTS
TRANSMISSION ELECTRON MICROSCOPY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
CURRENTS
DISLOCATIONS
EDDY CURRENTS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
FILMS
GRAIN BOUNDARIES
LINE DEFECTS
MEASURING INSTRUMENTS
MICROSCOPY
MICROSTRUCTURE
PHYSICAL PROPERTIES
POLYCRYSTALS
SAMPLE PREPARATION
SCANNING ELECTRON MICROSCOPY
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
TRANSIENTS
TRANSMISSION ELECTRON MICROSCOPY