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Influence of grain boundaries on the electrical properties of polycrystalline-silicon films. Progress report

Technical Report ·
OSTI ID:5251764

Progress is reported in: preparation of TEM specimens and Schottky diodes for EBIC investigations; acquisition and installation of instruments for EBIC, SEM, and DLTS; the discovery that certain grain boundaries in silicon are actually dissociated on an extremely fine scale; and the EBIC contrast analysis of atomic jogs in intrinsic grain boundary dislocations in a SIGMA-3 grain boundary. Attached are eight papers on studies of the structure and electrical properties of silicon. (LEW)

Research Organization:
Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science and Engineering
DOE Contract Number:
AS02-76ER02899
OSTI ID:
5251764
Report Number(s):
DOE/ER/02899-5; ON: DE82007833
Country of Publication:
United States
Language:
English