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Limitations to the application of the electron-beam-induced current in hydrogen-passivated silicon grain boundaries

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.333777· OSTI ID:6415740

The electron-beam-induced current (EBIC) mode of a scanning electron microscope is used to investigate the effect of hydrogen passivation on silicon grain boundaries. A reduction in the grain boundary surface recombination velocity is observed by EBIC linescans after passivation. The EBIC signal decays with repeated linescans across hydrogen-passivated grain boundaries. This is probably associated with the electron-beam-induced breaking of passivated bonds in the grain boundary. Subsequent annealing at about 200 /sup 0/C restores the hydrogen passivation effect on grain boundaries.

Research Organization:
Solar Energy Research Institute, Golden, Colorado 80401
OSTI ID:
6415740
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 56:10; ISSN JAPIA
Country of Publication:
United States
Language:
English