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Cross-sectional transmission electron microscopy/electron beam induced current investigations on as-grown and hydrogen-passivated, gas-assisted solidified polycrystalline silicon

Journal Article · · Journal of Vacuum Science and Technology, A: Vacuum, Surfaces, and Films; (USA)
DOI:https://doi.org/10.1116/1.576139· OSTI ID:5331041
 [1];  [2];  [3]
  1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, (Republic of China)
  2. Department of Electronic Technology, National Taiwan Institute of Telchnology, Tapei, Taiwan, (Republic of China)
  3. Department of Electrical Enginering, National Tsing Hua University, Hsinchu, Taiwan, (Republic of China)

Gas-assisted-solidified (GAS) polycrystalline silicon was developed for low-cost solar cells. The as-grown and hydrogen-passivated samples were investigated by the electron beam induced current (EBIC) technique and cross-sectional transmission electron microscopy (XTEM). The shallow penetrated EBIC line profiles across the grain boundaries were used to monitor the effects of hydrogen passivation, and the results were correlated with those revealed by the XTEM. All the samples after hydrogen passivation have reduced EBIC line profile contrast and grain boundary recombination velocities. But the thickness of the damaged layer observed from XTEM is 100 and 200 nm for 10 and 60 min passivation, respectively. Dislocations, defect clusters, thin amorphous layers, planar cracks, and bubbles were observed in the hydrogen-passivated samples. The near surface damaged areas were investigated by the 15 keV electron beam and resulted in the reduction of minority carrier diffusion length.

OSTI ID:
5331041
Journal Information:
Journal of Vacuum Science and Technology, A: Vacuum, Surfaces, and Films; (USA), Journal Name: Journal of Vacuum Science and Technology, A: Vacuum, Surfaces, and Films; (USA) Vol. 7:6; ISSN 0734-2101; ISSN JVTAD
Country of Publication:
United States
Language:
English