Grain-boundary edge passivation of GaAs films by selective anodization

Journal Article · Sun Oct 15 00:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90513· OSTI ID:6983444

Pande, K P; Hsu, Y; Borrego, J M; Ghandhi, S K

Solar cells built on polycrystalline gallium arsenide usually have very leaky reverse characteristics and, consequently, low open-circuit voltage. These problems arise from the effect of the Schottky diode made on the grain boundary, which behaves like n/sup +/-material. This diode shunts the active Schottky solar cell and deteriorates its performance characteristics. In this letter we describe the use of selective-anodization techniques to provide an insulating barrier over the edge of the grain boundary in order to passivate it. Leakage current reduction of 5--6 decades has been achieved by this method, with both aqueous and nonaqueous anodization methods.

• Research Organization: Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12181
• OSTI ID: 6983444
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANODIZATION
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CORROSION PROTECTION
CRYSTAL STRUCTURE
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTROCHEMICAL COATING
ELECTROLYSIS
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRAIN BOUNDARIES
LYSIS
MICROSTRUCTURE
PASSIVATION
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SOLAR CELLS
SURFACE COATING