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Thin-film gallium arsenide homojunction solar cells on recrystallized germanium and large-grain germanium substrates

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.337379· OSTI ID:5618536
Polycrystalline gallium arsenide films of 10-..mu..m thickness deposited on tungsten/graphite substrates by the reaction between gallium, hydrogen chloride, and arsine have been used for the fabrication of thin-film homojunction solar cells. The major problem associated with polycrystalline gallium arsenide thin-film cells is the grain-boundary shunting effect. In order to prepare solar cells with conversion efficiency higher than 10%, gallium arsenide films with large grains are necessary. Unlike gallium arsenide, germanium films can be easily recrystallized to enhance the grain size. Thin-film gallium arsenide solar cells of the p/sup +//n configuration with an AM1 efficiency of about 10% have been prepared using recrystallized germanium and large-grain germanium substrates.
Research Organization:
Southern Methodist University, Dallas, Texas 75275
OSTI ID:
5618536
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:2; ISSN JAPIA
Country of Publication:
United States
Language:
English