Thin-film gallium arsenide homojunction solar cells on recrystallized germanium and large-grain germanium substrates
Journal Article
·
· J. Appl. Phys.; (United States)
Polycrystalline gallium arsenide films of 10-..mu..m thickness deposited on tungsten/graphite substrates by the reaction between gallium, hydrogen chloride, and arsine have been used for the fabrication of thin-film homojunction solar cells. The major problem associated with polycrystalline gallium arsenide thin-film cells is the grain-boundary shunting effect. In order to prepare solar cells with conversion efficiency higher than 10%, gallium arsenide films with large grains are necessary. Unlike gallium arsenide, germanium films can be easily recrystallized to enhance the grain size. Thin-film gallium arsenide solar cells of the p/sup +//n configuration with an AM1 efficiency of about 10% have been prepared using recrystallized germanium and large-grain germanium substrates.
- Research Organization:
- Southern Methodist University, Dallas, Texas 75275
- OSTI ID:
- 5618536
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:2; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Large grain gallium arsenide thin films
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Conference
·
Tue May 01 00:00:00 EDT 1984
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
·
OSTI ID:5122855
Thin film gallium arsenide homojunction solar cells
Conference
·
Wed Sep 01 00:00:00 EDT 1982
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
·
OSTI ID:5426066
Thin film gallium arsenide solar cells
Conference
·
Sun May 01 00:00:00 EDT 1983
· Proc. - Electrochem. Soc.; (United States)
·
OSTI ID:6803624
Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CRYSTAL STRUCTURE
DATA
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
GRAIN SIZE
HOMOJUNCTIONS
INFORMATION
JUNCTIONS
METALS
MICROSTRUCTURE
NUMERICAL DATA
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
RECRYSTALLIZATION
SEMICONDUCTOR JUNCTIONS
SIZE
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
VAPOR DEPOSITED COATINGS
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CRYSTAL STRUCTURE
DATA
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
GRAIN SIZE
HOMOJUNCTIONS
INFORMATION
JUNCTIONS
METALS
MICROSTRUCTURE
NUMERICAL DATA
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
RECRYSTALLIZATION
SEMICONDUCTOR JUNCTIONS
SIZE
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
VAPOR DEPOSITED COATINGS