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Thin film gallium arsenide solar cells

Conference · · Proc. - Electrochem. Soc.; (United States)
OSTI ID:6803624
Thin films of gallium arsenide deposited on tungsten/graphite substrates by the reaction between gallium, hydrogen chloride, and arsine have been used for the fabrication of thin film solar cells. MOS solar cells of 9 cm/sup 2/ area with an AM1 efficiency of 8.5% have been prepared from ruthenium treated gallium arsenide films of about 10 ..mu..m thickness. Homojunction solar cells of p/sup +//n/n/sup +/ configuration of 1 cm/sup 2/ area with an AM1 efficiency of 8.8% have been produced using heat treatment immediately following the deposition of the device structure. The major problem associated with polycrystalline thin film cells is the grain boundary shunting effect. To further improve the conversion efficiency, thin gallium arsenide films with uniformly large grains are required unless more effective grain boundary passivation technique can be developed.
Research Organization:
Southern Methodist University, Dallas, Texas
OSTI ID:
6803624
Report Number(s):
CONF-8305161-
Conference Information:
Journal Name: Proc. - Electrochem. Soc.; (United States) Journal Volume: 83-11
Country of Publication:
United States
Language:
English