Thermal stabilization of thin-film GaAs solar cells with grain-boundary--edge passivation

Journal Article · Wed Dec 31 23:00:00 EST 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92113· OSTI ID:6721605

Ghandhi, S K; Shastry, S K; Borrego, J M

This letter describes the effect of isochronal anneals on polycrystalline gallium arsenide solar cells, whose grain-boundary edges have been passivated by selective anodization. Both the deterioration of this anodic oxide with temperature, as well as treatments for its full recovery and stabilization, are outlined in this Letter. This treatment consists of a rinse in strong HCl, and is carried out on cells after they are completely fabricated. It is proposed that conversion of the arsenic oxide component to its more stable hydroxide or chloride takes place during this treatment.

• Research Organization: Electrical and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12181
• OSTI ID: 6721605
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANNEALING
ANODIZATION
ARSENIC CHLORIDES
ARSENIC COMPOUNDS
ARSENIC OXIDES
ARSENIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL REACTIONS
CHLORIDES
CHLORINE COMPOUNDS
CORROSION PROTECTION
CRYSTAL STRUCTURE
CRYSTALS
DECOMPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTROCHEMICAL COATING
ELECTROLYSIS
EQUIPMENT
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRAIN BOUNDARIES
HALIDES
HALOGEN COMPOUNDS
HEAT TREATMENTS
HYDROCHLORIC ACID
HYDROGEN COMPOUNDS
HYDROXIDES
INORGANIC ACIDS
LYSIS
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
PASSIVATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
POLYCRYSTALS
PYROLYSIS
SOLAR CELLS
SOLAR EQUIPMENT
STABILIZATION
SURFACE COATING
TEMPERATURE DEPENDENCE
THERMOCHEMICAL PROCESSES