Evaluation of ITO/GaAs solar cells

Journal Article · Mon Mar 01 04:00:00 EST 1982 · J. Vac. Sci. Technol.; (United States)

DOI:https://doi.org/10.1116/1.571479· OSTI ID:5489468

Sheldon, P; Hayes, R E; Russell, P E; Nottenburg, R N; Emery, K A; Ireland, P J; Kazmerski, L L

Heterojunction solar cells have low-cost potential for meeting the long term economic goals for the photovoltaic technology. In this paper, a critical technical evaluation of the ITO/GaAs solar cell is presented, emphasizing the factors limiting the performance of the device. The devices are fabricated on p-type (Be-doped) GaAs grown by MBE, with the ITO deposited by ion beam techniques. Light and dark J-V characteristics are presented and compared for these devices. The formation of buried homojunctions is postulated for cells damaged due to ion beam deposition, leading to higher V/sub oc/ and low J/sub sc/. Heterojunction formation is found for minimally disrupted GaAs surfaces. AES depth profiles are used to evaluate the chemical width of the ITO/GaAs interfaces. Electrical data characterizing the ITO/GaAs interface are obtained using EBIC, C-V and intensity dependent V/sub o/c-J/sub s/c characteristics.

• Research Organization: Photovoltaic Devices and Measurements Branch, Solar Energy Research Institute, Golden, Colorado 80401
• OSTI ID: 5489468
• Journal Information: J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 20:3; ISSN JVSTA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALKALINE EARTH METALS
ARSENIC COMPOUNDS
ARSENIDES
AUGER ELECTRON SPECTROSCOPY
BEAMS
BERYLLIUM
CHALCOGENIDES
COATINGS
COST
CRYSTAL DOPING
CRYSTAL GROWTH
DEPOSITION
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
EFFICIENCY
ELECTRICAL PROPERTIES
ELECTRON SPECTROSCOPY
ELEMENTS
EPITAXY
EQUIPMENT
ETCHING
FABRICATION
FILMS
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
HIGH TEMPERATURE
HOMOJUNCTIONS
INDIUM COMPOUNDS
INDIUM OXIDES
INTERFACES
ION BEAMS
JUNCTIONS
MATERIALS
MEDIUM TEMPERATURE
METALS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTROSCOPY
SPUTTERING
SURFACE FINISHING
TIN COMPOUNDS
TIN OXIDES