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Title: Sputtered indium-tin oxide/cadmium telluride junctions and cadmium telluride surfaces

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.327892· OSTI ID:5336581

The properties of indium-tin oxide (ITO)/CdTe junction solar cells prepared by rf sputtering of ITO on P-doped CdTe single-crystal substrates have been investigated through measurements of the electrical and photovoltaic properties of ITO/CdTe and In/CdTe junctions, and of electron beam induced currents (EBIC) in ITO/CdTe junctions. In addition, surface properties of CdTe related to the sputtering process were investigated as a function of sputter etching and thermal oxidation using the techniques of surface photovoltage and photoluminescence. ITO/CdTe cells prepared by this sputtering method consist of an n/sup +/-ITO/n-CdTe/p-CdTe buried homojunction with about a 1-..mu..m-thick n-type CdTe layer formed by heating of the surface of the CdTe during sputtering. Solar efficiencies up to 8% have been observed with V/sub 0c/=0.82 V and J/sub s/c=14.5 mA/cm/sup 2/. The chief degradation mechanism involves a decrease in V/sub 0c/ with a transformation of the buried homojunction structure to an actual ITO/CdTe heterojunction.

Research Organization:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
OSTI ID:
5336581
Journal Information:
J. Appl. Phys.; (United States), Vol. 51:4
Country of Publication:
United States
Language:
English