Passivation of grain boundaries in silicon
Several papers have demonstrated that the introduction of hydrogen into polycrystalline silicon can remove grain boundary trapping states. Evidence for this comes from studies of both majority carrier transport over grain boundary potential barriers and minority carrier recombination at these defects. Data on hydrogen passivation will be reviewed and the relative utility of both these transport measurements will be discussed with regard to the optimization of this process. Recent studies utilizing a Kaufman ion source have shown that increasing the proton energies and the dose rate greatly facilitates passivation in silicon. Simple diffusion models will be presented which account for these observations. This new treatment method has reduced the time necessary to improve photovoltaic cell parameters to the domain of commercial feasibility; the prospects for further improvements will be assessed. Because this passivation technique is essentially a low energy implantation process, there are accompanying damage and sputtering effects: methods for the control of these will be suggested.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5483463
- Journal Information:
- J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 20:3; ISSN JVSTA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CRYSTAL DOPING
CRYSTAL STRUCTURE
DEPOSITION
DIFFUSION
DIRECT ENERGY CONVERTERS
ELECTRONIC STRUCTURE
ELEMENTS
GRAIN BOUNDARIES
HYDROGEN
ION IMPLANTATION
ION SOURCES
MICROSTRUCTURE
NONMETALS
OPTIMIZATION
PASSIVATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SPUTTERING
SURFACE COATING