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Improvement of polycrystalline silicon solar cells with grain-boundary hydrogenation techniques

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.91339· OSTI ID:5496925

Electron-beam-induced-current-- and dark-current--voltage measurements have been made on p/n photovoltaic cells fabricated from polycrystalline silicon. These data have demonstrated that grain-boundary hydrogenation greatly reduces grain-boundary minority carrier recombination and improves diode current-voltage characteristics.

Research Organization:
Sandia National Laboratories, Albuquerque, New Mexico 87185
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5496925
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 36:10; ISSN APPLA
Country of Publication:
United States
Language:
English