Grain boundary passivation kinetics for polycrystalline silicon
The passivation of grain boundaries in polycrystalline silicon with monatomic hydrogen has demonstrated considerable potential for improving thin film and ribbon solar cell efficiencies. Very little is known of the chemistry and kinetics of this process. In this paper we demonstrate a kinetic model which describes both the time and depth dependence of the passivation process. The process can be viewed as a fast near surface diffusion (30 microns) coupled with a slower bulk diffusion of the atomic hydrogen which can subsequently react in a bimolecular fashion with boundary defect sites. The diffusion constants determined from the model agree very well with the few experimentally determined ones in the literature.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5229702
- Report Number(s):
- SAND-83-1932C; CONF-840561-1; ON: DE84009464
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CHEMICAL REACTION KINETICS
CRYSTAL STRUCTURE
CRYSTALS
DIFFUSION
ELEMENTS
GRAIN BOUNDARIES
HYDROGEN
KINETICS
MICROSTRUCTURE
NONMETALS
PASSIVATION
POLYCRYSTALS
REACTION KINETICS
SEMIMETALS
SILICON