Kinetic modeling for hydrogen passivation of polycrystalline silicon

Journal Article · Mon Jul 15 04:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336158· OSTI ID:5525984

Ginley, D S; Hellmer, R P

The introduction of monatomic hydrogen into polysilicon grain boundaries has great potential for improving photovoltaic device efficiencies for thin-film and ribbon material. To optimize this process a more complete understanding of the relevant chemistry and kinetics is required. We discuss here two kinetic models of the passivation process: a one-dimensional Fickian model which is computationally easy and produces diffusion coefficients in good agreement with those in the literature and a two-dimensional model which though computationally complex provides a more accurate physical representation of the passivation process and more realistic grain-boundary diffusion coefficients for monatomic hydrogen. Both models appear to have practical utility for optimizing and understanding the passivation process. The nature of the site filling reaction is also discussed.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5525984
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:2; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CRYSTAL STRUCTURE
CRYSTALS
DIFFUSION
ELEMENTS
FILMS
GRAIN BOUNDARIES
HYDROGEN
KINETICS
MATHEMATICAL MODELS
MICROSTRUCTURE
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
PASSIVATION
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC EFFECT
POLYCRYSTALS
RADIATION TRANSPORT
SEMIMETALS
SILICON
THIN FILMS