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Comparison of low-pressure and plasma-enhanced chemical vapor deposited tungsten thin films

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.99184· OSTI ID:5444528

Tungsten thin films deposited by low-pressure and plasma-enhanced chemical vapor deposition are characterized to detail the effect of plasma-surface interactions on nucleation and growth. Transition from ..cap alpha..- to ..beta..-W is observed as the H/sub 2//WF/sub 6/ flow ratio is decreased from 10/1 to 1/1 in plasma-enhanced deposition; transition from ..cap alpha..-W to amorphous W is observed under the same conditions in low-pressure chemical vapor deposition. The temperature coefficient of resistivity varies from 4.9 to 2.0 ppthou/K as the plasma-deposited films switch from ..cap alpha.. to ..beta.. phase; the temperature coefficient of resistivity varies from 3.2 to -0.5 ppthou/K as the low-pressure chemically vapor deposited films become amorphous. The increased crystallinity and metastable phase formation in plasma environments are attributable to higher effective surface temperature resulting in enhanced surface mobility and grain growth.

Research Organization:
University of California, Berkeley, California 94720
OSTI ID:
5444528
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:14; ISSN APPLA
Country of Publication:
United States
Language:
English