Comparison of low-pressure and plasma-enhanced chemical vapor deposited tungsten thin films
Tungsten thin films deposited by low-pressure and plasma-enhanced chemical vapor deposition are characterized to detail the effect of plasma-surface interactions on nucleation and growth. Transition from ..cap alpha..- to ..beta..-W is observed as the H/sub 2//WF/sub 6/ flow ratio is decreased from 10/1 to 1/1 in plasma-enhanced deposition; transition from ..cap alpha..-W to amorphous W is observed under the same conditions in low-pressure chemical vapor deposition. The temperature coefficient of resistivity varies from 4.9 to 2.0 ppthou/K as the plasma-deposited films switch from ..cap alpha.. to ..beta.. phase; the temperature coefficient of resistivity varies from 3.2 to -0.5 ppthou/K as the low-pressure chemically vapor deposited films become amorphous. The increased crystallinity and metastable phase formation in plasma environments are attributable to higher effective surface temperature resulting in enhanced surface mobility and grain growth.
- Research Organization:
- University of California, Berkeley, California 94720
- OSTI ID:
- 5444528
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:14; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360101* -- Metals & Alloys-- Preparation & Fabrication
360102 -- Metals & Alloys-- Structure & Phase Studies
360104 -- Metals & Alloys-- Physical Properties
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COLLISIONS
CRYSTAL STRUCTURE
CRYSTAL-PHASE TRANSFORMATIONS
DATA
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EXPERIMENTAL DATA
FILMS
GRAIN GROWTH
INFORMATION
ION COLLISIONS
METALS
NUMERICAL DATA
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PLASMA
SURFACE COATING
THIN FILMS
TRANSITION ELEMENTS
TUNGSTEN