Enhancement of deposition rate by adding Si sub 2 F sub 6 in low-pressure chemical vapor deposition of W using WF sub 6 and H sub 2

Journal Article · Sun Jan 14 23:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.345730· OSTI ID:7171973

Nishikawa, S; Matsuhashi, H; Ohno, S ^[1]

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1. Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd., 550-5, Higashiasakawa-cho, Hachioji-shi, Tokyo 193, Japan (JP)

The effects of addition of Si{sub 2}F{sub 6} to low-pressure chemical vapor deposition of W using WF{sub 6} and H{sub 2} was studied. Adding sufficient Si{sub 2}F{sub 6} gas enhances the deposition rate ({ital R}{sub {ital D}}) of W film in the WF{sub 6} and H{sub 2} system by a factor of 2 over a wide range of deposition parameters, that is, the substrate temperature and the partial pressures of H{sub 2}, WF{sub 6}, and Si{sub 2} F{sub 6}. W films deposited under the conditions where the enhancement of {ital R}{sub {ital D}} occurs have a resistivity as low as that of films deposited in the WF{sub 6} and H{sub 2} system, except for some W films exhibiting {beta}-W structure, and have no Si contamination. The origin of the enhancement of {ital R}{sub {ital D}} by adding Si{sub 2}F{sub 6} is discussed.

• OSTI ID: 7171973
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 67:2; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
AUGER ELECTRON SPECTROSCOPY
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
COHERENT SCATTERING
DEPOSITION
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON SPECTROSCOPY
ELEMENTS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HIGH VACUUM
HYDROGEN
METALS
NONMETALS
PHYSICAL PROPERTIES
REFRACTORY METAL COMPOUNDS
SCATTERING
SILICON COMPOUNDS
SILICON FLUORIDES
SPECTROSCOPY
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
TUNGSTEN COMPOUNDS
TUNGSTEN FLUORIDES
X-RAY DIFFRACTION