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Photoelectric and electric properties of NSiC-nCdS heterojunctions

Journal Article · · Appl. Solar Energy (USSR) (Engl. Transl.); (United States)
OSTI ID:5439643
Heterojunctions of nSiC-nCdS were prepared by thermal evaporation of CdS powder in a vacuum of about 10/sup -5/ Torr onto a reflecting ..cap alpha..-SiC type plane with rho = 0.03-15 ..cap omega...cm. Metal contacts were deposited on the CdS films by evaporating indium and gold. Ohmic contact with the silicon carbide was made by fusing a mixture of the powders in the proportion of 2 parts of nickel to 1 part of tungsten. The current-voltage and capacitance-voltage characteristics were investigated with a view to establishing the mechanism responsible for current transport through the structure. A study was also made of the spectral dependence of photosensitivity and of the dependence of photo-emf (V/sub oc/) and the short circuit current (I/sub sc/) on the light intensity phi. The short-circuit current I/sub sc/ remains a linear function of the light intensity phi even at high solar-radiation densities.
Research Organization:
Physical-Technical Inst., Tashkent, USSR
OSTI ID:
5439643
Journal Information:
Appl. Solar Energy (USSR) (Engl. Transl.); (United States), Journal Name: Appl. Solar Energy (USSR) (Engl. Transl.); (United States) Vol. 13:3; ISSN ASOEA
Country of Publication:
United States
Language:
English