Photoelectric properties of pCdTe-nCdS film heterojunctions

Conference · Sun Jan 01 04:00:00 EST 1978 · Appl. Solar Energy (USSR) (Engl. Transl.); (United States)

OSTI ID:5624482

Azimov, S A; Mirsagatov, Sh A; Rasulov, D T

The spectral distribution of the collection coefficient (Q) is investigated for a pCdTe-nCdS film heterojunction for various thicknesses of the upper wide-band semiconductor (CdS), together with the luminous volt-ampere characteristic (VAC) under varying illumination. It has been found that as the thickness of the cadmium sulfide layer increases the value of Q rises and at d approx. = 5 ..mu..m, Q approx. = 0.94 to 0.95 in the 0.56 to 0.8 ..mu..m region. Analysis of photoelectric and electrophysical measurements has shown that there is an i-region in a pCdTe-nCdS heterojunction. The factor responsible for appearance of the i-region evidently is evaporation of cadmium from the surface of sublimated CdTe films during cooling.

• Research Organization: Physical-Technical Inst., Tashkent, USSR
• OSTI ID: 5624482
• Conference Information: Journal Name: Appl. Solar Energy (USSR) (Engl. Transl.); (United States) Journal Volume: 14:3
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CADMIUM SULFIDE SOLAR CELLS
CADMIUM TELLURIDE SOLAR CELLS
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FILMS
JUNCTIONS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SPECTRAL RESPONSE