Photoelectric properties of n-SnO/sub 2/ - n-HgGa/sub 2/Se/sub 4/ heterojunctions

Journal Article · Thu Aug 01 04:00:00 EDT 1985 · J. Appl. Spectrosc. (Engl. Transl.); (United States)

OSTI ID:6713255

Lunev, A V; Metlinsky, P N; Rud', Yu V; Tyrziu, V G; Undalov, Yu K

Isotypic heterojunctions n-SnO/sub 2/ - n-HgGa/sub 2/Se/sub 4/ are developed for the first time and their photoelectric properties are investigated. It is shown that the volt photosensibility maximum for heterojunctions of approx. = 10/sup 3/ V/W (300 K) is achieved in the region of h omega approx. = approx. = 2.1 divided 2.8 eV and it is situated at the depth of the fundamental absorption of the compound HgGa/sub 2/Se/sub 4/.

• OSTI ID: 6713255
• Journal Information: J. Appl. Spectrosc. (Engl. Transl.); (United States), Journal Name: J. Appl. Spectrosc. (Engl. Transl.); (United States) Vol. 63:2; ISSN JASYA
• Country of Publication: United States
• Language: Russian

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400400 -- Electrochemistry
400500* -- Photochemistry
ANTIMONY COMPOUNDS
ANTIMONY OXIDES
CHALCOGENIDES
CHEMISTRY
DATA
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
MEDIUM TEMPERATURE
MERCURY COMPOUNDS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHOTOCHEMISTRY
PHOTOSENSITIVITY
PHYSICAL PROPERTIES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SENSITIVITY