Threshold currents for GaInAsP lasers emitting at l. 55. mu. m

Journal Article · Sun Jun 01 04:00:00 EDT 1980 · Opt. Lett.; (United States)

DOI:https://doi.org/10.1364/OL.5.000211· OSTI ID:5439361

Buus, J

An analysis of the threshold current for double-heterostructure GaInAsP lasers is presented. The analysis is based on a simple expression for the gain--current relation and includes the effect of optical confinement. Using a refractive-index model for GaInAsP compounds, lasers emitting at 1.55 ..mu..m are investigated. Asymmetrical structures, i.e., lasers with different n- and p-confinement layers, are considered.

• Research Organization: Electromagnetics Institute, Technical University of Denmark, DK-280 Lyngby, Denmark
• OSTI ID: 5439361
• Journal Information: Opt. Lett.; (United States), Journal Name: Opt. Lett.; (United States) Vol. 6:6; ISSN OPLED
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS