High-temperature cw operation of GaInAsP/InP lasers emitting at 1. 5. mu. m

Journal Article · Tue Jul 01 04:00:00 EDT 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91688· OSTI ID:5294840

Hsieh, J J

cw operation at temperatures up to 55 /sup 0/C has been achieved for GaInAsP/InP double-heterostructure lasers emitting at 1.5 ..mu..m which were grown without a GaInAsP buffer layer.

• Research Organization: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
• OSTI ID: 5294840
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 37:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
DATA
ELECTROMAGNETIC RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
LASERS
LAYERS
MEDIUM TEMPERATURE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
WAVELENGTHS