Injected carrier effects on modal properties of 1. 55. mu. m Ga1nAsP lasers

Journal Article · Wed Jun 01 04:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1071969· OSTI ID:5556436

Bouley, J C; Chaminant, G; Charil, J; Sorel, Y

The authors report the observation of a strong variation of the active layer refractive index with the current in a 1.55 ..mu..m ''gain-guiding'' GaInAsP laser 12 ..mu..m wide. A negative refractive index change of several 10/sup -2/ has been found between the center and the edge of the stripe from a transverse mode distribution analysis and a study of the wavelength shift of the longitudinal modes with the current. The authors have shown that this effect can explain the increase of threshold current of a gain-guiding laser for a small stripe width. They have observed, moreover, a time dependence of the transverse mode width in the transient regime in pulsed operation and a broadening of a time average spectrum of a stabilized single longitudinal mode laser under current modulation. They have also shown that these two last effects can be explained by the refraction index current dependence.

• Research Organization: Centre National d'Etudes des telecommunications, Bagneux
• OSTI ID: 5556436
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-19:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CARRIERS
CONTROL
CURRENTS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
MODE CONTROL
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TIME DEPENDENCE
WAVELENGTHS