Surface and bulk electronic structure of thin-film wurtzite GaN

Journal Article · Wed Oct 01 04:00:00 EDT 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.56.10271· OSTI ID:543828

Dhesi, S S; Stagarescu, C B; Smith, K E ^[1]; Doppalapudi, D; Singh, R; Moustakas, T D ^[2]

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1. Department of Physics, Boston University, Boston, Massachusetts 02215 (United States)
2. Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215 (United States)

The bulk and surface valence-band electronic structure of thin-wurtzite GaN has been studied using angle-resolved photoemission spectroscopy. The bulk band dispersion along the {Gamma}{Delta}A, {Gamma}{Sigma}M, and {Gamma}TK directions of the bulk Brillouin zone was measured. Our results indicate the local-density approximation band-structure calculations using partial-core corrections for the Ga 3d states predict the relative dispersion of many of the observed bands with a high degree of accuracy. Furthermore, a nondispersive feature was identified near the valence-band maximum in a region of k space devoid of bulk states. This feature is identified as emission from a surface state on GaN(0001)-(1{times}1). The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of sp{sub z} character, consistent with a dangling-bond state. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 543828
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 16 Vol. 56; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BAND THEORY
BRILLOUIN ZONES
CHEMICAL BONDS
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM NITRIDES
PHOTOELECTRON SPECTROSCOPY
THIN FILMS