Unoccupied band structure of wurtzite GaN(0001)

Journal Article · Mon Feb 01 04:00:00 EST 1999 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.59.5003· OSTI ID:306267

Valla, T; Johnson, P D ^[1]; Dhesi, S S; Smith, K E ^[2]; Doppalapudi, D; Moustakas, T D ^[3]; Shirley, E L ^[4]

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1. Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 (United States)
2. Department of Physics, Boston University, Boston, Massachusetts 02215 (United States)
3. Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215 (United States)
4. NIST, PHY B208, Gaithersburg, Maryland 20899 (United States)

We report an inverse photoemission study of the unoccupied states of thin-film {ital n}-type wurtzite GaN. For incident electron energies below 30 eV, free-electron bands do not provide a good description of the initial state. However, using a calculated quasiparticle band structure for the initial state, we can obtain good agreement between our measurements and the calculated low-lying conduction bands. No evidence of unoccupied surface states is observed in the probed part of the Brillouin zone, confirming earlier angle resolved photoemission studies, which identified the surface states on GaN(0001) as occupied dangling bond states, resonant with the valence band. {copyright} {ital 1999} {ital The American Physical Society}

• OSTI ID: 306267
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 7 Vol. 59; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BRILLOUIN ZONES
ELECTRONIC STRUCTURE
GALLIUM COMPOUNDS
GALLIUM NITRIDES
PHOTOEMISSION
SEMICONDUCTOR MATERIALS
SURFACE PROPERTIES
THIN FILMS