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Occupied and unoccupied electronic structure of Na doped MoS{sub 2}(0001)

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4903824· OSTI ID:22395522
; ;  [1]; ;  [2]; ;  [3]; ; ;  [4]; ;  [5];  [4]
  1. Department of Physics and Astronomy, Theodore Jorgensen Hall, 855 N 16th St., University of Nebraska, Lincoln, Nebraska 68588-0299 (United States)
  2. Department of Physics, University of Central Florida, 4000 Central Florida Blvd., Orlando, Florida 32816 (United States)
  3. Department of Chemistry and the Materials Science and Engineering Program, University of California - Riverside, Riverside, California 92521 (United States)
  4. Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima 739-0046 (Japan)
  5. Graduate School of Science, Hiroshima University, Higashi-Hiroshima 739-8526 (Japan)
The influence of sodium on the band structure of MoS{sub 2}(0001) and the comparison of the experimental band dispersion with density functional theory show excellent agreement for the occupied states (angle-resolved photoemission) and qualitative agreement for the unoccupied states (inverse photoemission spectroscopy). Na-adsorption leads to charge transfer to the MoS{sub 2} surface causing an effect similar to n-type doping of a semiconductor. The MoS{sub 2} occupied valence band structure shifts rigidly to greater binding with little change in the occupied state dispersion. Likewise, the unoccupied states shift downward, approaching the Fermi level, yet the amount of the shift for the unoccupied states is greater than that of the occupied states, effectively causing a narrowing of the MoS{sub 2} bandgap.
OSTI ID:
22395522
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 105; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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