Observation of highly dispersive surface states on GaN(0001)1{times}1

Journal Article · Tue Jun 01 04:00:00 EDT 1999 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.59.R15586· OSTI ID:351878

Chao, Y; Stagarescu, C B; Downes, J E; Ryan, P; Smith, K E ^[1]; Hanser, D; Bremser, M D; Davis, R F ^[2]

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1. Department of Physics, Boston University, Boston, Massachusetts 02215 (United States)
2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

The electronic structure of {ital n}-type, Si-doped, wurtzite GaN(0001)1{times}1 surfaces has been studied using synchrotron radiation excited angle-resolved photoemission. The GaN thin films were grown by metal-organic chemical-vapor deposition on SiC. Two previously unobserved surface bands were measured and fully characterized. One of the states is highly nonlocalized, dispersing throughout much of the valence band along the {bar {Gamma}}-{bar K}-{bar M}and {bar {Gamma}}-{bar M} directions of the 1{times}1 surface Brillouin zone. The identification of these states as surface bands was confirmed both by their lack of dispersion perpendicular to the surface, and by the sensitivity of the states to hydrogen adsorption. The symmetry properties of the states were determined using the linear polarization of the incident synchrotron radiation. These states are quite distant from the localized nondispersive surface state previously observed on GaN. {copyright} {ital 1999} {ital The American Physical Society}

• OSTI ID: 351878
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 24 Vol. 59; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BRILLOUIN ZONES
ELECTRONIC STRUCTURE
GALLIUM COMPOUNDS
GALLIUM NITRIDES
PHOTOEMISSION
SILICON
SURFACES
SYNCHROTRON RADIATION